STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mo sfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature tsop-6 surface mount package saves board space. package information package mpq leadersize tsop-6 3k 7? inch absolute maximum ratings(t a =25 unless otherwise noted) parameter symbol ratings unit n-channel p-channel drain-source voltage v ds 23 -23 v gate-source voltage v gs 12 12 v continuous drain current 1 i d @t a =25 i d @t a =70 3.7 -2.7 a 2.9 -2.1 pulsed drain current 2 i dm 8 -8 a continuous source current (diode conduction) 1 i s 1.05 -1.05 a power dissipation 1 p d @t a =25 1.15 w p d @t a =70 0.7 operating junction and st orage temperature range tj, tstg -55 ~ +150 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e g1 s2 g2 d1 s1 d2 6 1 3 2 5 4
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. thermal resistance ratings parameter symbol n-channel p-channel unit typ max typ max maximum junction to ambient 1 t Q 10 sec r ? ja 93 110 93 110 / w steady state 130 150 130 150 notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage n-ch v gs(th) 1 - - v v ds =v gs , i d =250ua p-ch -1 - - v ds =v gs , i d = -250ua gate-body leakage current n-ch i gss - - 100 ua v ds = 0 v, v gs = 12 v p-ch - - -100 v ds = 0 v, v gs = -12 v zero gate voltage drain current n-ch i dss - - 1 ua v ds =16 v, v gs =0 v p-ch - - -1 v ds =-16v, v gs =0 v n-ch - - 10 v ds =16v, v gs =0 v, t j =55 p-ch - - -10 v ds = -16v, v gs =0 v, t j =55 on-state drain current 1 n-ch i d(on) 5 - - a v ds = 5v, v gs =4.5 v p-ch -5 - - v ds = -5v, v gs = -4.5 v drain-source on-resistance 1 n-ch r ds(on) - - 58 m ? v gs =4.5v, i d = 3.7a p-ch - - 112 v gs =-4.5v, i d = 3.1a n-ch - - 82 v gs =2.5v, i d = 2.7a p-ch - - 172 v gs =-2.5v, i d = -2.2a n-ch - - 160 v gs =1.8v, i d = 2.2a p-ch - - 210 v gs =-1.8v, i d = -2.0a forward transconductance 1 n-ch g fs - 10 - s v ds = 5v, i d = 3.7a p-ch - 5 - v ds = -5v, i d = 3.1a diode forward voltage 1 n-ch v sd - 0.80 - s i s = 1.05a, v gs = 0v p-ch - -0.83 - i s = -1.05a, v gs = 0v
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. dynamic 2 total gate charge n-ch q g - 7.5 - nc n-channel v ds =15v, v gs = 4.5v, i d = 2.7a p-channel v ds = -15v, v gs = -4.5v, i d = -3.1a p-ch - 3.8 - gate-source charge n-ch q gs - 0.6 - p-ch - 0.6 - gate-drain charge n-ch q gd - 1.0 - p-ch - 1.5 - turn-on delay time n-ch t d(on) - 5 - ns n-channel v dd = 15v, r gen = 15 ? , v gs = 4.5v, i d = 1a p-channel v dd = -15v, r gen = 15 ? v gs = -4.5v, i d = -1a p-ch - 5 - rise time n-ch t r - 12 - p-ch - 15 - turn-off delay time n-ch t d(off) - 13 - p-ch - 20 - fall time n-ch t f - 7 - p-ch - 20 - notes 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not su bject to production testing.
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
STT3520C n-ch: 3.7 a, 23 v, r ds(on) 58 m ? p-ch: -2.7 a, -23 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 02-dec-2010 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
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